Poly(perfluoroalkylation) of Metallic Nitride Fullerenes Reveals Addition-Pattern Guidelines: Synthesis and Characterization of a Family of Sc3N@C80(CF3)n (n = 2−16) and Their Radical Anions
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https://figshare.com/articles/dataset/Poly_perfluoroalkylation_of_Metallic_Nitride_Fullerenes_Reveals_Addition_Pattern_Guidelines_Synthesis_and_Characterization_of_a_Family_of_Sc_sub_3_sub_N_C_sub_80_sub_CF_sub_3_sub_sub_i_n_i_sub_i_n_i_2_16_and_Their_Radical_Anions/2688289
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A family of highly stable (poly)perfluoroalky-lated metallic nitride cluster fullerenes was prepared in high-temperature reactions and characterized by spectroscopic (MS, 19F NMR, UV−vis/NIR, ESR), structural and electrochemical methods. For two new compounds, Sc3N@C80(CF3)10 and Sc3N@C80(CF3)12, single crystal X-ray structures are determined. Addition pattern guidelines for endohedral fullerene derivatives with bulky functional groups are formulated as a result of experimental (19F NMR spectroscopy and single crystal X-ray diffraction) studies and exhaustive quantum chemical calculations of the structures of Sc3N@C80(CF3)n (n = 2-16). Electrochemical studies revealed that Sc3N@C80(CF3)n derivatives are easier to reduce than Sc3N@C80, the shift of E1/2 potentials ranging from +0.11 V (n = 2) to +0.42 V (n = 10). Stable radical anions of Sc3N@C80(CF3)n were generated in solution and characterized by ESR spectroscopy, revealing their 45Sc hyperfine structure. Facile further functionalizations via cycloadditions or radical additions were achieved for trifluoromethylated Sc3N@C80 making them attractive versatile platforms for the design of molecular and supramolecular materials of fundamental and practical importance.
本研究通过高温反应合成了一系列高稳定性的(多)全氟烷基化金属氮化物团簇富勒烯,并借助光谱学(质谱(MS)、氟-19核磁共振波谱(19F NMR)、紫外-可见/近红外光谱(UV−vis/NIR)、电子顺磁共振(ESR))、结构表征与电化学方法完成了对该类化合物的表征。针对两种新型化合物Sc₃N@C₈₀(CF₃)₁₀与Sc₃N@C₈₀(CF₃)₁₂,我们解析得到了其单晶X射线结构。通过实验(氟-19核磁共振波谱与单晶X射线衍射)研究,以及对Sc₃N@C₈₀(CF₃)ₙ(n=2~16)结构的全面量子化学计算,我们提出了带有大体积官能团的内嵌富勒烯(endohedral fullerene)衍生物的加成模式规则。电化学研究结果显示,Sc₃N@C₈₀(CF₃)ₙ衍生物相较于原始的Sc₃N@C₈₀更易被还原,其半波电位(E1/2)的偏移区间为+0.11 V(n=2)至+0.42 V(n=10)。我们在溶液中制备得到Sc₃N@C₈₀(CF₃)ₙ的稳定自由基阴离子,并通过电子顺磁共振(ESR)波谱对其进行表征,观测到了其45Sc的超精细结构(hyperfine structure)。经三氟甲基化修饰后的Sc₃N@C₈₀可通过环加成反应(cycloaddition)或自由基加成反应(radical addition)实现简便的后续官能化修饰,使其成为用于构建兼具基础研究与应用价值的分子及超分子材料(supramolecular materials)的极具潜力的多功能平台。
创建时间:
2016-02-23



