Data from: InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.

本研究设计并验证了一款采用InGaAs作为吸收区、InAlAs作为雪崩区的单光子雪崩二极管（single photon avalanche diode, SPAD），可用于探测1550 nm波长的光子。该器件的性能表征涵盖了漏电流、暗计数率与单光子探测效率随210 K至294 K区间内温度变化的规律。这款SPAD展现出优异的温度稳定性，其击穿电压的温度依赖性约为45 mV·K⁻¹。在210 K温度下以门控模式工作时，该SPAD在1550 nm波段实现了26%的光子探测概率，暗计数率可达1×10⁸ Hz。该SPAD的时间响应特性表现为：随着过偏置电压升高，时间抖动（半高全宽，full width at half maximum）逐渐降低，实测得到的最小时间抖动为70 ps。