A Closed-Form Model for N-Polar Gallium Nitride Heterostructures

The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equation for a finite triangular potential well. The results from our model are validated with numerical data for a wide range of bias conditions, channel layer thickness and spacer layer mole fraction. Finally, the gate capacitance of the heterostructure is evaluated using automatic differentiation and validated against experimental data. This model will be useful in the development of closed-form current-voltage models for circuit level analysis involving N-polar MIS-HEMTs.本文提出了一种用于计算N极性GaN/AlGaN异质结构中电荷密度与表面电势的闭合形式模型。该模型基于有限三角势阱的薛定谔方程解推导而成。我们通过涵盖广泛偏置条件、沟道层厚度及间隔层摩尔分数的数值数据，对模型结果进行了验证。最后，利用自动微分方法计算了该异质结构的栅极电容，并通过实验数据验证了其准确性。该模型将有助于开发适用于N极性MIS-高电子迁移率晶体管（MIS-HEMTs）电路级分析的闭合形式电流-电压模型。