Tilted fluctuation electron microscopy data from simulated and deposited amorphous Ta

These datasets were used to compare fluctuation electron microscopy analysis methods on simulated and sputter deposited amorphous tantalum. The Ta is 8 nm thick in both the simulated and deposited samples. The deposited Ta is sandwiched between two layers of amorphous 10 nm-thick SiNx. Data are also provided for SiNx deposited on SiNx. Deposited Ta FEM patterns were collected on a TitanX at 200 kV with a convergence angle of 0.51 mrad and a camera length of 300 mm. Simulated Ta FEM patterns were generated using the Prismatic STEM simulation software (see references). The samples were tilted between 0o and 45o in 15o increments. Deposited Ta: .dm4 (Gatan DigitalMicrograph) files are provided with the raw scanning nanodiffraction data for each tilt angle .png images of the mean CBED pattern for each tilt angle are provided Simulated Ta: .h5, .xyz (atomic coordinates), and .txt (Prismatic input parameters defined) files are provided with the raw scanning nanodiffraction data for each tilt angle .png images of the mean CBED pattern for each tilt angle are provided The atomic coordinates for the simulated Ta were provided by Jun Ding. Simulated FEM patterns were produced by Luis Rangel DaCosta using Prismatic STEM simulation software. Neal Reynolds grew the experimental Ta and SiNx thin films.本数据集用于对比模拟与溅射沉积非晶钽的波动电子显微（Fluctuation Electron Microscopy, FEM）分析方法。模拟样品与沉积样品中的钽（Ta）层厚度均为8 nm。沉积态钽被夹于两层厚度为10 nm的非晶氮化硅（SiNₓ）之间。同时提供了氮化硅沉积于氮化硅基底上的相关数据。 沉积态钽的FEM衍射图样于200 kV加速电压下，在TitanX透射电镜上采集，会聚角为0.51 mrad，相机长度为300 mm。模拟钽样品的FEM衍射图样使用Prismatic STEM模拟软件生成（详见参考文献）。 样品以15°为增量，在0°至45°范围内进行倾斜。 沉积态钽： 为每个倾斜角度提供了原始扫描纳米衍射数据的.dm4（Gatan DigitalMicrograph格式）文件，以及各倾斜角度下平均会聚束电子衍射（Convergent Beam Electron Diffraction, CBED）图样的.png图像。 模拟钽： 为每个倾斜角度提供了包含原始扫描纳米衍射数据的.h5、.xyz（原子坐标）及.txt（已定义Prismatic输入参数）文件，同时提供各倾斜角度下平均CBED图样的.png图像。 模拟钽的原子坐标由丁俊（Jun Ding）提供。模拟FEM衍射图样由路易斯·兰赫尔·达科斯塔（Luis Rangel DaCosta）使用Prismatic STEM模拟软件生成。尼尔·雷诺兹（Neal Reynolds）制备了实验用钽及氮化硅薄膜。