Data supporting publication entitled "Disentangling the impact of point defect density and carrier localisation enhanced Auger recombination on efficiency droop in (In,Ga)N/GaN quantum wells"
收藏DataCite Commons2023-05-12 更新2025-04-17 收录
下载链接：
https://figshare.manchester.ac.uk/articles/dataset/Data_supporting_publication_entitled_Disentangling_the_impact_of_point_defect_density_and_carrier_localisation_enhanced_Auger_recombination_on_efficiency_droop_in_In_Ga_N_GaN_quantum_wells_/22801913/1
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资源简介：
Phototluminescence intensity vs carrier density for three samples grown at different temperatures; Phototluminescence transients for these samples; Calculated radiative and Auger recombination coefficients.
在不同温度下生长的三个样品的光致发光（Photoluminescence）强度与载流子浓度（carrier density）的关系；这些样品的光致发光瞬态（transients）；计算得到的辐射复合系数（radiative recombination coefficient）与俄歇复合系数（Auger recombination coefficient）
提供机构：
University of Manchester
创建时间：
2023-05-12
