Supplementary Information Vertical Diodes on n-type β-Ga2O3 using p-Cu2O for Heterojunction Formation and Edge Termination

Supplementary material provides detailed XPS and XRD characterization of Cu2O films, reverse bias C-V measure ments, forward and reverse J-V characteristics of JBSDs, TE-fitted J-V-T analysis, extracted diode parameters (SBH, η, Ron,sp, and Von), TCAD-simulated E-field distributions for various SBD designs, Cu2O thickness, and the effect of interface traps along with RT and temperature-dependent forward I-V data, and reverse switching measurement data.

本补充材料详细提供了氧化亚铜（Cu₂O）薄膜的X射线光电子能谱（X-ray Photoelectron Spectroscopy, XPS）与X射线衍射（X-ray Diffraction, XRD）表征结果、结势垒肖特基二极管（Junction Barrier Schottky Diodes, JBSDs）的反向偏置电容-电压测试、正向与反向电流-电压特性、热电子发射（Thermionic Emission, TE）拟合的电流-电压-温度（J-V-T）分析、提取得到的二极管参数（势垒高度（Schottky Barrier Height, SBH）、理想因子η、比导通电阻Ron,sp以及导通电压Von）、针对不同肖特基势垒二极管（Schottky Barrier Diodes, SBD）设计的半导体工艺计算机辅助设计（Technology Computer-Aided Design, TCAD）模拟电场分布、氧化亚铜薄膜厚度的影响、界面陷阱的作用，以及室温（Room Temperature, RT）与温度相关的正向电流-电压数据和反向开关测试数据。