Dataset on fabrication and characterization of field-effect phototransistors based on MoS2 monolayers and InAs quantum dot heterostructures for infrared detection

The data concern the development of a field-effect phototransistor based on a heterostructure of monolayer molybdenum disulfide (MoS2) and indium arsenide (InAs) quantum dots for infrared detection. The MoS2 monolayer was grown via metal-organic chemical vapor deposition (MOCVD), transferred to a p++ silicon (Si)/silicon dioxide (SiO2) that acts as a back gate, and patterned with nickel (Ni)/palladium (Pd) contacts by electron-beam lithography. Commercial InAs quantum dots were deposited by spin-coating. Measurements include optoelectronic characterization under blue (455 nm), green (530 nm), red (735 nm), and infrared (1,200 nm) light-emitting diodes (LEDs), as well as atomic force microscopy (AFM), Kelvin probe force microscopy (KPFM), photoluminescence (PL) spectroscopy, Raman spectroscopy, and technology computer-aided design (TCAD) simulations. This work is part of a thesis/dissertation. The data cannot be made available at this time. The author is available for contact.

本数据集围绕一款用于红外探测的场效应光电晶体管（field-effect phototransistor）的研发工作展开，该器件基于单层二硫化钼（MoS₂）与砷化铟（InAs）量子点异质结制备。单层二硫化钼通过金属有机化学气相沉积（MOCVD）法生长，随后被转移至作为背栅的p++型硅（Si）/二氧化硅（SiO₂）衬底，并通过电子束光刻工艺制备镍（Ni）/钯（Pd）电极。商用砷化铟量子点通过旋涂法完成沉积。本数据集包含的测试与表征内容如下：在蓝光（455 nm）、绿光（530 nm）、红光（735 nm）及红外光（1200 nm）发光二极管（LEDs）照射下的光电子特性表征，原子力显微镜（AFM）、开尔文探针力显微镜（KPFM）、光致发光（PL）光谱、拉曼光谱测试，以及技术计算机辅助设计（TCAD）仿真结果。本研究属于学位论文的一部分，当前暂不公开该数据集，作者可联系沟通相关事宜。