Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging nonvolatile memory technology. In this study, we investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a novel form of atomically thin two-dimensional ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These superior characteristics highlight the potential of two-dimensional sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

Methods
The data was collected by MATLAB code. The resistance Rxx was normalized by the geometric factor.

电压可切换的集体电子现象可维持至原子尺度，这对于制备面积紧凑、能耗优化的高效电子器件具有重要意义，尤其在新兴非易失性存储器技术领域。本研究针对室温下基于双层氮化硼滑动铁电性的铁电场效应晶体管（ferroelectric field-effect transistor, FeFET）的性能展开了系统性探究。滑动铁电性是一类新型原子级超薄二维铁电材料，其核心特征为通过层间滑动实现面外极化的切换。本研究采用单层石墨烯作为沟道层制备FeFET器件，并对其进行性能测试，结果表明该器件具备纳秒量级的超快开关速度以及超过10¹¹次开关循环的高耐久度，性能可与当前顶尖的FeFET器件相媲美。上述优异特性表明，二维滑动铁电材料有望为下一代非易失性存储器技术的发展提供新的思路。
研究方法
本研究的数据通过MATLAB代码采集得到。电阻Rxx通过几何因子完成归一化处理。