Single junction amorphous silicon solar cells and tandem junction amorphous silicon and silicon germanium solar cells

This data contains values of open circuit voltage, short circuit current fill factor and efficiency of single junction p-I-n type amorphous silicon solar cells and tandem or dual junction amorphous silicon amorphous silicon germanium solar cells fabricated at BPSolar At Toano, Virginia, USA

本数据集收录了美国弗吉尼亚州托阿诺市BPSolar公司制备的单结p-i-n型非晶硅太阳能电池，以及叠层或双结非晶硅/非晶硅锗太阳能电池的开路电压（open circuit voltage）、短路电流（short circuit current）、填充因子（fill factor）与光电转换效率的相关数值。