Computational Data: Thickness-driven modulation of electronic transport in SnSe2-grown films by low-temperature atomic layer deposition

Low-temperature atomic layer deposition (ALD) is increasingly important for the integration of layered metal dichalcogenides such as tin diselenide (SnSe₂) into advanced nanoelectronic devices, where compatibility with temperature-sensitive substrates and precise thickness control are essential. Using a novel and highly reactive selenium precursor, namely, bis(trimethylstannyl)selenide or Se(SnMe3)2, SnSe2 films were deposited at reduced temperatures. As-deposited films are initially amorphous; however, post-deposition annealing at 250 °C induces crystallization. Structural analysis reveals a clear evolution in crystallinity: ultrathin films (~25 nm) exhibit nearly single-crystalline, defect-free domains, while thicker films (~100 nm) transition to a polycrystalline structure. This controlled variation in crystal quality directly influences the electronic transport properties, demonstrating the potential of low-temperature ALD combined with mild annealing for scalable fabrication of high-performance, thickness-engineered SnSe2-based devices.低温原子层沉积（atomic layer deposition, ALD）在将二硒化锡（SnSe₂）等层状金属硫族化合物集成至先进纳米电子器件的进程中愈发关键，此类器件需兼顾温敏衬底兼容性与精确的厚度调控。研究团队采用一种新型高反应性硒前驱体，即双(三甲基锡基)硒醚（Se(SnMe3)2），在较低温度下制备出SnSe₂薄膜。初始沉积态薄膜呈无定形结构；经250 ℃的沉积后退火处理后，薄膜发生结晶。结构分析结果清晰展现了结晶度的演化规律：厚度约25 nm的超薄膜呈现近乎单晶的无缺陷畴区，而厚度约100 nm的较厚薄膜则转变为多晶结构。晶体质量的这种可控变化直接影响薄膜的电子输运性能，证明了低温原子层沉积结合温和退火工艺，在可规模化制备高性能、厚度调控型SnSe₂基器件方面的应用潜力。