Direct-write projection lithography of quantum dot micropillar single photon sources: data

The data are part of a series of experiments that charactrise the properties of semiconductor devices known as micropillars. The Q-factors measured are a figure of merit for the quality of the sidewall roughness of the etched structures (Fig.2). Further to that the properties of semiconductor nanostructures enclosed within the micropillars are neasured, using the second order correlation of the photons emitted along with the non-classical interference observed between subsequent photons produced by the quantum dot micropillar devices (Fig.3), reflecting the quality of the photons produced. The file is structured as follows each sheet corresponds to a part of each figure found within the manuscript with title "Direct-write projection lithography of quantum dot micropillar single photon sources", e.g. Fig.2(a), the detailed description may be found below. Sheet Fig.2(a): in column A the wavelength and in B the counts for the mesured data, in D the wavelength and E the corresponding values for the fitted data. Sheet Fig.2(b): in column A the wavelength and in B the normalised reflectivity for the mesured data, in E the wavelength and F the corresponding values for the fitted data. Sheet Fig.2(c): in column A the diameter of the micropillars measured, in B the measured Q-factor for each micropillar and in C the corresponding error for the measured Q, in E the diameter and F the corresponding values for the fit to the model used. Sheet Fig.2(d): in column A the diameter of the micropillars measured, in B the measured Q-factor for each micropillar and in C the corresponding error for the measured Q, in E the diameter and F the corresponding values for the fit to the model used. Sheet Fig.2(d): in column A the diameter of the micropillars measured, in B the measured Q-factor for each micropillar and in C the corresponding error for the measured Q, in F the diameter and G the corresponding values for the fit to the model used. Sheet Fig.3(a) The square root of power applied in column A and the measured count-rate in column B. Sheet Fig.3(b) In column A the time difference between the coincidences and in B the normalised g2. Sheet Fig.3(d) In column A the time difference between the coincidences, in B the normalised g2 for co-polarised arms of the HOM setup and in C the normalised g2 for orthogonally polarised arms. Sheet Fig.3(e) In column A the time difference between the coincidencesand in B the normalised g2 for orthogonally polarised arms of the HOM setup. Sheet Fig.3(f) In column A the time difference between the coincidences and in B the normalised g2 for co-polarised arms of the HOM setup.

本数据集属于一系列表征半导体微柱器件特性的实验数据。本次测得的品质因数（Q-factor）是表征刻蚀结构侧壁粗糙度优劣的性能指标（图2）。除此之外，本数据集还通过量子点微柱器件产生的后续光子间的非经典干涉现象，结合光子的二阶关联特性，对微柱内部封装的半导体纳米结构特性进行表征（图3），该结果可反映所产生光子的质量。

本文件的工作表设置如下：每个工作表对应论文《量子点微柱单光子源的直写投影光刻》（Direct-write projection lithography of quantum dot micropillar single photon sources）中的某一插图，例如Fig.2(a)，各工作表的详细说明如下。
工作表Fig.2(a)：A列记录波长数据，B列为实测计数数据；D列为波长数据，E列为对应的拟合数据结果。
工作表Fig.2(b)：A列记录波长数据，B列为实测归一化反射率数据；E列为波长数据，F列为对应的拟合数据结果。
工作表Fig.2(c)：A列为实测微柱直径，B列为各微柱的实测品质因数，C列为实测品质因数的对应误差；E列为微柱直径，F列为对应模型拟合的结果。
工作表Fig.2(d)：A列为实测微柱直径，B列为各微柱的实测品质因数，C列为实测品质因数的对应误差；E列为微柱直径，F列为对应模型拟合的结果。
工作表Fig.2(d)：A列为实测微柱直径，B列为各微柱的实测品质因数，C列为实测品质因数的对应误差；F列为微柱直径，G列为对应模型拟合的结果。
工作表Fig.3(a)：A列为施加功率的平方根值，B列为实测计数率。
工作表Fig.3(b)：A列为符合事件的时间差，B列为归一化g²值。
工作表Fig.3(d)：A列为符合事件的时间差，B列为HOM干涉装置共偏振臂的归一化g²值，C列为正交偏振臂的归一化g²值。
工作表Fig.3(e)：A列为符合事件的时间差，B列为HOM干涉装置正交偏振臂的归一化g²值。
工作表Fig.3(f)：A列为符合事件的时间差，B列为HOM干涉装置共偏振臂的归一化g²值。