Negative Photoconductance Response in Polarity-Switchable IGZO Thin Film Photodetectors

A photo responsive polarity switchable indium gallium zinc oxide (IGZO) phototransistor, achieved by introducing negative photoconductivity (NPC) type photo response. It exhibits a positive photoconductivity response under solar blind ultraviolet (265 nm), while exhibiting NPC response in the visible to near-infrared band (400-1050 nm), thereby expanding the light detection range of the IGZO photodetector to the near-infrared region while maintaining good selectivity in the ultraviolet band.

本研究通过引入负光电导性（negative photoconductivity, NPC）型光响应机制，制备得到光响应极性可切换的铟镓锌氧化物（indium gallium zinc oxide, IGZO）光电晶体管。该器件在日盲紫外（solar blind ultraviolet, 265 nm）波段下呈现正光电导响应，而在可见光至近红外波段（400~1050 nm）下则表现出负光电导响应；由此在维持紫外波段良好选择性的同时，将IGZO光电探测器的光探测范围拓展至近红外区域。