Data for: Effect of bending test on the performance of CdTe solar cells on flexible ultra-thin glass produced by MOCVD

The photovoltaic performance was measured by J-V under AM1.5G at 25 ⁰C following a 10 minutes light soak, using an ABET Technologies Sun 2000 Solar Simulator. The measurements were performed when the cell was in a planar state, and then when flexed to a 40 mm and subsequent 32 mm bend radius. After flexion the device was relaxed and measured flat. In addition, the sample was held at a bend radius of 32 mm for 168 hours with measurement at 0, 24, 48, 120, 144 and 168 hours. Again, the sample was measured flat before and after the bending test.
Additionally, external quantum efficiency (EQE) and capacitance voltage (C-V) measurements were performed before and after 168 hours bending test. A Bentham PVE300 photovoltaic spectrometer was used for EQE measurements and a Solartron analytical modulab model 2100A was used for C-V measurements.
Residual stress measurements were made with a Bruker D8 Discover X-ray diffraction system. The equipment was set up in a point mode with a polycapillary element and nickel filter. Scans were made with a 0.02° step size, at a time of 1 second per step. The scans were over the full 0−0.45 sin2(ψ) in both positive and negative ψ tilts to confirm the absence of shear stress. Peak evaluation was undertaken using the Pearson VII fitting and stresses were calculated using a normal stress model. The Diffrac, Leptos software was used to model the peaks, then the peak shift was changed to strain using the Poisson’s ratio of 0.2 and Young’s Modulus of 77000MPa. This data was then plotted with strain vs the sin2(ψ) value.

本研究中，光伏性能通过AM1.5G标准下的J-V曲线测试完成，测试环境为25℃，先经过10分钟光浸泡，测试设备采用ABET Technologies Sun 2000太阳模拟器。测试首先在电池处于平面状态时进行，随后分别将电池弯折至40 mm及后续32 mm的弯曲半径下完成测试；弯折完成后将器件放松，再次于平面状态下进行测量。此外，将样品保持在32 mm弯曲半径状态达168小时，并分别在0、24、48、120、144及168小时节点进行性能测试；该弯折测试前后，同样先对样品进行平面状态下的测量。
此外，在168小时弯折测试的前后，均开展了外量子效率（external quantum efficiency, EQE）与电容-电压（capacitance voltage, C-V）测试。其中外量子效率测试采用Bentham PVE300光伏光谱仪，电容-电压测试采用Solartron analytical modulab 2100A型分析仪。
残余应力测试采用Bruker D8 Discover X射线衍射系统完成，设备设置为点模式，搭配多毛细管元件与镍滤光片。扫描步长设为0.02°，每步采集时长1秒；扫描范围覆盖完整的0−0.45 sin²(ψ)区间，并同时进行正负ψ倾斜扫描，以确认无剪切应力存在。峰评估采用Pearson VII函数拟合，应力计算基于正应力模型。通过Diffrac、Leptos软件完成峰建模后，利用泊松比0.2与杨氏模量77000MPa将峰位移转换为应变，最终绘制应变与sin²(ψ)值的关系曲线。