Supplementary Experimental methods and Figures

including Details of experimental methods; Water contact angle of pristine PI; Raman spectrum of MoS2; Temperature calibration; Temperature measurements; Raman spectrum of MoS2 of device channel; Optical micrograph of temperature measurement; Thermal finite-element modeling simulations; Filtered TEM image of MoS2 film; Electrical performance of MoS2 top-gate FETs.

包含以下内容：实验方法细节；原始聚酰亚胺（PI）的水接触角；二硫化钼（MoS₂）的拉曼光谱；温度校准；温度测量；器件沟道内二硫化钼的拉曼光谱；温度测量的光学显微图像；热有限元建模仿真；二硫化钼薄膜的滤波透射电子显微镜（Transmission Electron Microscopy, TEM）图像；二硫化钼顶栅场效应晶体管（Field-Effect Transistor, FETs）的电学性能。