半极性AlN薄膜x衍射数据集

半极性AlGaN基DUV LED降低了量子阱中的极化电场，加之具有偏振发光特性，这些都有利于提高DUV LED量子效率。然而，异质外延的半极性AlN材料通常含有高的位错和基面堆垛层错密度，从而劣化了半极性DUV LED性能。受限于材料生长困难，半极性AlN和AlGaN物理性能及DUV LED器件仍然没有得到充分的研究，因此，亟待突破这一难题。定向控制外延能大大降低半极性GaN材料的缺陷密度，而这一技术应用于半极性AlN材料面临Al原子迁移困难的挑战。石墨烯作为新型的二维材料，在外延初始阶段降低了AlN的成核密度以及Al原子的迁移势垒，从而促进AlN初始成核长大，导致更快的生长速度。因此，本数据集提出石墨烯辅助的定向控制外延半极性AlN技术，解决Al原子迁移困难，制备高质量的半极性AlN材料，进一步探索AlGaN材料外延的缺陷与应力调控技术、掺杂技术以及量子阱发光特性，为DUV LED提供了新的研究思路和技术路线，将进一步推动DUV LED应用发展。

Semi-polar AlGaN-based DUV LEDs reduce the polarization electric field in quantum wells and exhibit polarized emission properties, both of which are beneficial for improving the quantum efficiency of DUV LEDs. However, heteroepitaxial semi-polar AlN materials usually have high dislocation and basal stacking fault densities, which degrade the performance of semi-polar DUV LEDs. Limited by the difficulty in material growth, the physical properties of semi-polar AlN and AlGaN as well as DUV LED devices have not been fully investigated, so it is urgent to overcome this problem. Directionally controlled epitaxy can significantly reduce the defect density of semi-polar GaN materials, but applying this technology to semi-polar AlN materials faces the challenge of difficult migration of Al atoms. As a new type of 2D material, graphene reduces the nucleation density of AlN and the migration barrier of Al atoms in the initial stage of epitaxy, thereby promoting the initial nucleation and growth of AlN and leading to a faster growth rate. Therefore, this dataset proposes a graphene-assisted directionally controlled epitaxy technology for semi-polar AlN to solve the problem of difficult Al atom migration, prepare high-quality semi-polar AlN materials, further explore the defect and stress regulation technologies, doping technology, and quantum well emission properties of AlGaN material epitaxy, provide new research ideas and technical routes for DUV LEDs, and further promote the application development of DUV LEDs.