Molecular beam epitaxy growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates

Article abstract:Magnetic doping of 2D materials such as Transition Metal Dichalcogenides is promising for enhancement of magneto-optical properties, as it was previously observed for 3D diluted magnetic semiconductors. To maximize the effect of magnetic ions, they should be incorporated into the crystal lattice of 2D material rather than form separated precipitates. This work shows study on incorporating magnetic manganese ions into the MoSe2 monolayers using molecular beam epitaxy. We test growth on various substrates with very different properties: polycrystalline SiO2 on Si, exfoliated 2D hexagonal Boron Nitride flakes (placed on SiO2/Si), monocrystalline sapphire, and exfoliated graphite (on tantalum foil). Although atomic force microscopy images indicate presence of MnSe precipitates, but at the same time, various techniques reveal effects related to alloying MoSe2 with Mn: Raman scattering and photoluminescence measurements shows energy shift related to presence of Mn, scanning transmission microscopy shows Mn induced partial transformation of 1H to 1T’ phase. Above effects evidence partial incorporation of Mn into MoSe2 layer.Archive structure:The .zip file has 8 folders named "Figure X" X=1-8. Each folder contains data from the corresponding figure subsequently, from 1 to 8. In every folder, one can find additionally a text file with measurement details and the necessary software to open data files (if needed). Files:The majority of files are text files, that can be easily opened in any text editor. For opening special files there is a note with adequate software placed in the .zip file (next to the data).Measurements:PL / Raman spectroscopy - measurements were taken using flow cryostat, excitation wavelength 532 nm, and temperatures 10 K and room temperature (ap. 300 K) respectively for PL and RS.Transmittance - was taken at room temperature employing a white light source.AFM - apparatus by Bruker (model dimension icon) with ScanAsyst mode was used (with dedicated probe).

文章摘要：过渡金属二硫化物（Transition Metal Dichalcogenides）等二维材料的磁性掺杂有望增强磁光特性，这一现象此前已在三维稀磁半导体中被观察到。为最大化磁性离子的效应，其应纳入二维材料的晶格而非形成独立沉淀物。本工作展示了利用分子束外延（molecular beam epitaxy）将磁性锰离子引入MoSe₂单分子层的研究。我们在性质差异显著的多种衬底上测试生长：硅基多晶二氧化硅、置于SiO₂/Si上的剥离二维六方氮化硼（hexagonal Boron Nitride）薄片、单晶蓝宝石及置于钽箔上的剥离石墨。尽管原子力显微镜图像显示存在硒化锰沉淀物，但多种技术揭示了MoSe₂与锰合金化相关的效应：拉曼散射和光致发光测量显示与锰存在相关的能量偏移，扫描透射显微镜显示锰诱导的1H到1T'相的部分转变。上述效应证明锰已部分纳入MoSe₂层。
存档结构：压缩文件包含8个命名为"Figure 1"至"Figure 8"的文件夹，每个文件夹依次存放对应图1至图8的数据。每个文件夹中另有包含测量细节的文本文件及打开数据文件所需的软件（如需要）。
文件：大多数文件为文本文件，可在任意文本编辑器中轻松打开。对于特殊文件，压缩文件中（数据旁）附有说明相应软件的注释。
测量方法：光致发光（PL）/拉曼光谱（Raman spectroscopy）——采用流动低温恒温器测量，激发波长为532 nm，PL和拉曼光谱的测量温度分别为10 K和室温（约300 K）。透射率——在室温下采用白光光源测量。原子力显微镜（AFM）——使用布鲁克（Bruker）公司的Dimension Icon型号设备，采用ScanAsyst模式（配备专用探针）。