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Co3Sn2S2薄膜霍尔器件的输运性质测量

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国家基础学科公共科学数据中心2026-01-30 收录
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将SrTiO3(111) 衬底上的Co3Sn2S2薄膜制备成霍尔器件,通过电子输运测量揭示了其本征磁性外尔半金属的本质特征,并且测到大的反常霍尔电导率和异常霍尔角,为进一步制作多种量子器件并探索各种奇异的量子效应奠定了基础。 该数据集中的数据由商用的牛津仪器下属的AsylumResearch研发的原子力显微镜(型号Cypher)对MBE制备的Co3Sn2S2薄膜进行扫描获得;利用物性测量仪对Co3Sn2S2霍尔器件的输运性质进行测量;PPT文件为数据汇总分析结果。

Co3Sn2S2 thin films on SrTiO3(111) substrates were fabricated into Hall devices. Electronic transport measurements revealed the intrinsic characteristic features of this intrinsic magnetic Weyl semimetal, and large anomalous Hall conductivity and anomalous Hall angle were detected. This work lays a solid foundation for the further fabrication of various quantum devices and the exploration of various exotic quantum effects. The data in this dataset were acquired by scanning MBE-grown Co3Sn2S2 thin films using a Cypher-model atomic force microscope (AFM) developed by Asylum Research, a subsidiary of Oxford Instruments. The transport properties of the Co3Sn2S2 Hall devices were measured with a physical property measurement system. The PPT file presents the results of data summarization and analysis.
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中国科学院物理研究所
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