Neutron scattering study on noncollinear antiferromagnets D019 hcp-Mn3Sn thin film

Currently, we are reaching capacity limits in conventional Si-based memory devices, due to restrictions on further miniaturization. The concept of antiferromagnetic spin electronics (spintronics) has gained much traction to overcome this challenge. It has become clear that AFMs are actually vastly advantageous to realize memory devices, being far more robust than FM-based devices, with high packing density, and insensitivity to external fields. Unfortunately, to date, only a few materials have emerged as candidates. Thus, in our research, we have searched for the new non-collinear AFM Mn3Sn and have fabricated it in a thin film form. In order to access its fundamental magnetic property, we will use a magnetic neutron scattering technique to observe its noncollinear magnetic configuration.

目前，由于进一步微型化的限制，传统硅基（Si-based）存储器件正接近容量极限。反铁磁自旋电子学（spintronics）的概念已成为应对这一挑战的热门方向。显然，反铁磁材料（AFMs）在实现存储器件方面具有极大优势——相比铁磁基器件，其鲁棒性更强、封装密度更高，且对外场不敏感。遗憾的是，迄今为止，仅少数材料被视为候选对象。因此，在本研究中，我们探寻了新型非共线反铁磁Mn3Sn（non-collinear AFM Mn3Sn）并将其制备成薄膜形式。为获取其基本磁学性质，我们将采用磁中子散射技术（magnetic neutron scattering technique）观测其非共线磁结构（noncollinear magnetic configuration）。