Preamplifier design and analysis for dual output silicon photomultiplier

[Background]: In order to apply in different scenarios of silicon-photomultiplier-coupled scintillator detector, Preamplifiers need to fulfill different requirements. [Purpose]: This study aims to design high-bandwidth, low-noise preamplifiers to cater for different output modes of silicon-photomultiplier-coupled scintillator detector. [Methods]: Based on OPA855 and consideration of bandwidth and noise, a transimpedance amplifier (TIA) and a voltage feedback amplifier (VFB) were designed. The amplifier circuits were simulated and analysed using PSpice for TI software to obtain circuit parameters. Finally, the signal response and noise baseline level were measured, and signals of source were analysed using a silicon-photomultiplier-coupled Cerium-doped Gadolinium Aluminum Gallium Garnet (GAGG(Ce)) detector. [Results and Conclusions]: These preamplifiers have good gain stability. TIA's bandwidth is 101MHz lower than VFB's 381MHz, but its baseline noise level is better than the VFB's . In addition, TIA is suitable for energy measurements and small-area SiPM applications, while VFB is more suitable for time measurements and large-area SiPM arrays.

[背景]：为满足硅光电倍增管耦合闪烁探测器在不同场景下的应用需求，前置放大器需适配多样化的性能指标。[目的]：本研究旨在设计高带宽、低噪声的前置放大器，以适配硅光电倍增管耦合闪烁探测器的不同输出模式。[方法]：以OPA855为核心器件，结合带宽与噪声特性考量，设计了跨阻放大器（TIA）与电压反馈放大器（VFB）两种电路方案。利用TI公司的PSpice软件对放大器电路进行仿真分析，以确定最优电路参数；最终通过实验测量信号响应与噪声基线水平，并采用硅光电倍增管耦合的掺铈钆铝镓石榴石（GAGG(Ce)）探测器对信号源输出进行分析。[结果与结论]：所设计的前置放大器均具备良好的增益稳定性。TIA的带宽为101MHz，低于VFB的381MHz，但其噪声基线水平更优；此外，TIA适用于能量测量与小面积硅光电倍增管（SiPM）应用场景，而VFB则更适合时间测量与大面积SiPM阵列。