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Annealing effect on crystal structure, carrier concentration, and magnetism inone-layer hole-doped T*-type cuprates Pr1.6Sr0.4CuO4−δ

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Figshare2025-07-10 更新2026-04-08 收录
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https://figshare.com/articles/dataset/Annealing_effect_on_crystal_structure_carrier_concentration_and_magnetism_inone-layer_hole-doped_T_-type_cuprates_Pr1_6Sr0_4CuO4_/29512136/1
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We investigated the effect of annealing on the crystal structure, effective hole concentration, and magnetic properties of T*-type cuprates Pr<sub>1.6</sub>Sr<sub>0.4</sub>CuO<sub>4−δ</sub> (PSCO) using neutron powder diffraction, X-ray absorption spectroscopy, and muon spin rotation. A significant number of oxygen vacancies were observed at both the apical and in-plane oxygen sites in the Ar-annealed (Ar-AN), as-sintered (AS), and high-pressure O<sub>2</sub>-annealed (O<sub>2</sub>-AN) PSCO compounds. Our experiments reveal a noticeable reduction in the effective hole concentration, shifting from the heavily-doped to lightly-doped region. Furthermore, we observed enhanced static magnetic order in Ar-AN compound, whereas the transition temperature was suppressed in the AS and high-pressure O<sub>2</sub>-AN PSCO. The present results demonstrate an exceptional example of lightly-doped T*-type cuprates. In particular, apical oxygen is more sensitive and substantially influenced by annealing, and the enhanced magnetism in reduction annealing reduces the effect of in-plane oxygen scenario under annealing.

本研究采用中子粉末衍射(neutron powder diffraction)、X射线吸收谱学(X-ray absorption spectroscopy)与μ子自旋旋转(muon spin rotation)技术,探究了退火工艺对T*型铜氧化物Pr₁.₆Sr₀.₄CuO₄−δ(简称PSCO)的晶体结构、有效空穴浓度及磁学性能的影响。针对氩气退火(Ar-AN)、原始烧结(AS)及高压氧气退火(O₂-AN)的PSCO样品,研究团队在其轴向氧位点与面内氧位点均观测到大量氧空位。实验结果表明,样品的有效空穴浓度出现显著降低,从重掺杂区域向轻掺杂区域偏移。此外,氩气退火样品的静态磁序得到增强,而原始烧结与高压氧气退火的PSCO样品的磁转变温度则受到抑制。本研究结果为轻掺杂T*型铜氧化物提供了一个极具代表性的案例。具体而言,轴向氧对退火工艺更为敏感,受其影响更为显著;还原退火带来的磁序增强,削弱了退火过程中面内氧位点的作用效应。
提供机构:
Wang, Tong
创建时间:
2025-07-10
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