Datatset for the journal article 'Tungsten dichalcogenide WS2xSe2-2x films via single source precursor low-pressure CVD and their (thermo-)electric properties'

Data in support of the journal article published in Journal of Materials Chemistry A This dataset contains: The raw data of figure 3 to 8. The figures are as follows: Figure 3. Grazing incidence X-ray diffraction patterns of the as-deposited WS2xSe2-2x films from (1)-(4). Figure 4. Raman spectral scan presented over a range of 50-450 cm-1, of the as-deposited WS2xSe2-2x. films. Figure 5. Elemental XPS scans of (a) W 4f, (b) Se 3d and (c) S 2p for all as-deposited WS2xSe2-2x films deposited from precursors (1)–(4). (d) Composition of all the as-deposited films deposited from precursors (1)–(4). Figure 6. (a) Temperature-dependent electrical conductivity, (b) Arrhenius plot for WS2xSe2-2x films deposited from precursors (1)-(4). (c) Electrical conductivity and (d) Hall measurements against the chalcogenide content of the films. Figure 7. (a) Carrier concentration and (b) carrier mobility of the as-deposited binary films, WS2 (red) and WSe2 (orange). Compared with the films annealed at 500oC in the respective chalcogenide atmospheres. Figure 8. Temperature-dependent (a) Seebeck, and (b) power factor measurements for the WS2xSe2-2x films deposited from precursors (1)-(4).

本数据集为发表于《Journal of Materials Chemistry A》的期刊论文提供数据支撑，包含第3至第8幅图的原始实验数据。各图详情如下：
图3：由前驱体(1)~(4)制备的沉积态WS₂ₓSe₂₋₂ₓ薄膜的掠入射X射线衍射（Grazing incidence X-ray diffraction）图谱。
图4：沉积态WS₂ₓSe₂₋₂ₓ薄膜在50~450 cm⁻¹波数范围内的拉曼光谱扫描结果。
图5：所有由前驱体(1)~(4)制备的沉积态WS₂ₓSe₂₋₂ₓ薄膜的X射线光电子能谱（X-ray Photoelectron Spectroscopy, XPS）扫描数据：(a) W 4f轨道能谱、(b) Se 3d轨道能谱与(c) S 2p轨道能谱；(d) 前驱体(1)~(4)制备的全部沉积态薄膜的元素组分占比。
图6：(a) 前驱体(1)~(4)制备的WS₂ₓSe₂₋₂ₓ薄膜的温度依赖性电导率；(b) 该类薄膜的阿伦尼乌斯曲线图；(c) 电导率与(d) 霍尔测试结果随薄膜硫族元素组分的变化关系。
图7：(a) 载流子浓度与(b) 载流子迁移率，涵盖沉积态二元薄膜WS₂（红色标识）、WSe₂（橙色标识），以及分别在对应硫族元素气氛中经500℃退火后的薄膜的对应测试数据。
图8：前驱体(1)~(4)制备的WS₂ₓSe₂₋₂ₓ薄膜的(a) 温度依赖性塞贝克（Seebeck）系数与(b) 功率因子测试结果。