ChipIR Commercial Access Infineon OX10 - week37/2019

High-voltage power semiconductor devices, such as IGBTs, diodes and MOSFETs are susceptible to destructive failure due to terrestrial cosmic radiation (CR), notably the nucleon part. As a consequence, device development has to ensure adequate radiation hardness for every device technology. This aim can only partly be met by device and technology simulations and, therefore, also calls for extensive device tests. In order to reduce testing times accelerated irradiation tests at facilities with a nucleon energy spectrum close to the natural terrestrial CR are essential. The thus obtained failures rates will be compared to simulation predictions and storage tests.

高压功率半导体器件（High-voltage power semiconductor devices），如绝缘栅双极型晶体管（IGBT）、二极管、金属-氧化物半导体场效应晶体管（MOSFET），易因地面宇宙辐射（terrestrial cosmic radiation，CR）发生破坏性失效，尤其是其中的核子成分所致。因此，器件开发必须确保每种器件技术具备足够的抗辐射能力（radiation hardness）。这一目标仅通过器件与工艺仿真只能部分实现，故而还需开展大量器件测试。为缩短测试时间，在核子能谱接近自然地面宇宙辐射的设施中开展加速辐照试验（accelerated irradiation tests）至关重要。由此获得的失效率（failure rates）将与仿真预测结果及存储试验结果进行对比。