Datasets for publication "Multiphase superconductivity at the interface between ultrathin FeTe islands and Bi2Te3" by Tkac et al.

First line of each dataset specifies observables and its units for each column.

ZeroFieldResistance_Figure_3:3b: Zero-field temperature dependence of the electrical resistance of Si-capped FeTe/Bi2Te3 samples with 1 ML of FeTe and 2 ML of FeTe 3c Temperature dependence of the electrical resistance of Si-capped FeSe/Bi2Se3 sample  and – for comparison – a bare Bi2Se3 sample 

Data used to plot Figs. 3b and 3c

FieldDepResistance_Figure_4:a, d show minor and major steps in the zero-field resistance of Si-capped FeTe/Bi2Fe3 for 1 ML and 2 ML FeTe coverages. Respective magnetic field-dependent data is shown in b, e. For reasons of clarity, the data are not shown for all fields measured. c and f show temperature-dependent critical magnetic fields Bc determined from data b, e at different percentage levels of the total drop ΔR. 

Data used to plot Figs. 4a-4f and derive critical fields from field-dependent resistance measurements.

每个数据集的首行均标明各列对应的观测物理量及其单位。

零场电阻数据集（对应图3）：图3b展示了硅包覆FeTe/Bi₂Te₃样品的零场电阻温度依赖性，该样品的FeTe覆盖度分别为1单层（monolayer, ML）与2单层（monolayer, ML）；图3c展示了硅包覆FeSe/Bi₂Se₃样品的电阻温度依赖性，并以裸露Bi₂Se₃样品作为对照。本数据集包含用于绘制图3b与3c的实验数据。

场依赖电阻数据集（对应图4）：图4的子图a、d展示了FeTe覆盖度为1单层（monolayer, ML）与2单层（monolayer, ML）的硅包覆FeTe/Bi₂Fe₃样品的零场电阻中的微小阶跃与主阶跃；对应的磁场依赖性数据展示于子图b、e中。为保证图表清晰，未呈现全部实测磁场下的数据。子图c、f则展示了从子图b、e的数据中，基于总电阻下降ΔR的不同百分比阈值提取得到的临界磁场Bc随温度的变化关系。本数据集包含用于绘制图4a至4f的实验数据，以及从磁场依赖性电阻测量结果中提取临界磁场所需的全部原始数据。