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Semiconductor Laser with OpticaI Feedback

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Figshare2017-08-09 更新2026-04-29 收录
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Output power time series from an edge-emitting, multiple quantum well 830nm semiconductor laser subject to optical feedback. Time series recorded for different combinations of optical feedback level and laser injection current. Detection bandwidth 4 GHz and sampling rate 20 GSa/s.Full details here http://research.science.mq.edu.au/photonics-dynamical-systems/our-research/semiconductor-lasers-with-optical-feedback/bulk-optic-4-ghz-bw/This data set was recorded from an experimental semiconductor laser subject to optical feedback on 13/08/12. Laser wavelength ~ 830nm. External cavity round trip time 4.5ns. During the experiment, 2 system parameters were varied: the optical feedback level and laser injection current. - Optical feedback was varied by changing the RF power to an acousto-optic modulator (AOM) which varies the amount of laser power transmitted in the 0th order beam. A voltage between 0V-1V corresponds to maximum transmission (0V) and minimum transmission (1V). The actual power transmitted by the AOM is not a linear relationship with voltage. Relative feedback level can be approximated from the reduction in laser threshold. - Laser injection is controlled by directly varying the current supply to the device (Profile ITC510 Laser Diode Combi-controller). Laser was held at a constant 25C. The dataset contains 88,101 files containing output power time series recorded from the laser using a fast photodiode (Discovery Semiconductors DCS30S 22GHz) and 4GHz realtime oscilloscope (Agilent 54854A) for different settings of: - Injection (251 values = 45mA to 70mA in 0.1mA steps) - Feedback (351 values from 0.45V to 0.8V in 0.001V steps) The filenames consist of the AOM and INJ values at which the data was recorded: e.g. AOM_0.642V_INJ_45.2mA.h5 : feedback = 0.642 V, injection = 45 mA Each hdf5 file consist of a single dataset called 'TimeSeries'. This contains a time series of amplitude values measured as the voltage across the 50ohm oscilloscope input. Time series were sampled at 20GSamples/s (50ps per data point) and contain 20,000pts for a total record length of 1microsecond.ReferenceJ. P. Toomey and D. M. Kane, 'Mapping the dynamic complexity of a semiconductor laser with optical feedback using permutation entropy,' Optics Express 22 (2), 1713-1725 (2014).

本数据集收录了带光反馈(optical feedback)的边发射型多量子阱830nm半导体激光器的输出功率时间序列。时间序列采集自不同光反馈强度与激光注入电流的组合工况,实验探测带宽为4 GHz,采样率为20 GSa/s。完整实验细节可访问以下链接查看:http://research.science.mq.edu.au/photonics-dynamical-systems/our-research/semiconductor-lasers-with-optical-feedback/bulk-optic-4-ghz-bw/ 本数据集采集自2012年8月13日的光反馈半导体激光实验平台,激光器波长约830nm,外腔往返时间为4.5ns。实验中共调控两个系统参数:光反馈强度与激光注入电流。 光反馈强度通过改变声光调制器(acousto-optic modulator, AOM)的射频功率实现调控,该器件可调节0级衍射光束的透射激光功率。输入电压范围为0V至1V,其中0V对应最大透射功率,1V对应最小透射功率,但声光调制器的透射功率与输入电压并非线性关系,相对反馈强度可通过激光阈值的降低程度近似估算。 激光注入电流通过直接调节激光器供电电源(型号为ITC510激光二极管组合控制器)实现调控,实验过程中激光器温度维持恒定25℃。 本数据集共包含88101个数据文件,均为采用快速光电探测器(fast photodiode,型号为Discovery Semiconductors DCS30S 22GHz)与4GHz实时示波器(realtime oscilloscope,型号为Agilent 54854A)采集得到的激光输出功率时间序列,对应以下两类参数的不同设置: - 注入电流:共251个取值,范围为45mA至70mA,步长0.1mA - 反馈电压:共351个取值,范围为0.45V至0.8V,步长0.001V 文件名包含采集时的声光调制器反馈电压与激光注入电流参数,例如`AOM_0.642V_INJ_45.2mA.h5`,对应反馈电压0.642V、注入电流45.2mA。 每个HDF5文件均包含一个名为`TimeSeries`的数据集,存储示波器50Ω输入端口上的电压幅值时间序列。时间序列采样率为20GSa/s(单个数据点间隔50ps),单条序列包含20000个数据点,总记录时长为1微秒。 参考文献:J. P. Toomey与D. M. Kane,《利用排列熵(permutation entropy)绘制带光反馈半导体激光器的动态复杂性图谱》,Optics Express 22(2), 1713-1725 (2014).
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2017-08-09
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