Synaptic Behavior in Ferroelectric Epitaxial Rhombohedral Hf0.5Zr0.5O2 Thin Films

In this work, the switching mechanism of the rhombohedral phase of HZO films is characterized by a two-stage process. In addition, the synaptic behaviour of this phase is presented, comparing it with previous reports on orthorhombic or non-epitaxial films. Unexpected similarities have been found between these structurally distinct systems.

本研究中，氧化铪锆（HZO）薄膜的菱方相（rhombohedral phase）开关机制通过两步过程得以表征。此外，本研究还呈现了该菱方相的突触行为，并将其与此前针对正交相（orthorhombic phase）或非外延薄膜的相关报道进行了对比。研究发现，这些结构迥异的体系之间存在出人意料的相似性。