Summary of Reported Anisotropic and Isotropic Atomic Layer Etching (ALE) Processes for Metals

This comparison, derived from Table II of “Anisotropic/Isotropic Atomic Layer Etching of Metals” (Appl. Sci. Converg. Technol. 29(3), 2020) https://doi.org/10.5757/ASCT.2020.29.3.041 , provides an overview of reported ALE processes applied to metallic materials. It summarizes adsorption and desorption chemistries, process temperatures, and etch-per-cycle values for various metals under both anisotropic (plasma- or ion-assisted) and isotropic (thermal or chemical) conditions. The table highlights how diverse chemistries—such as oxidation, fluorination, ligand exchange, and acid vapor reactions—enable angstrom-scale control in metal etching while maintaining selectivity and surface smoothness.

本对比内容源自《金属的各向异性/各向同性原子层蚀刻》（发表于《应用科学与融合技术》2020年第29卷第3期，DOI: 10.5757/ASCT.2020.29.3.041）中的表II，旨在概述已报道的应用于金属材料的原子层蚀刻（Atomic Layer Etching, ALE）工艺。该内容汇总了各类金属在各向异性（anisotropic）与各向同性（isotropic）条件下的吸附/解吸化学机制、工艺温度以及每周期蚀刻量（etch-per-cycle），其中各向异性条件对应等离子体或离子辅助工艺，各向同性条件对应热驱动或化学工艺。该表格阐明了氧化、氟化、配体交换以及酸蒸气反应等多样化化学机制，可在金属蚀刻过程中实现埃级尺度的精准控制，同时兼顾蚀刻选择性与表面平整度。