Data for Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Paper abstract: We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO2 interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a 1=f power spectral trend. Such individual defect fluctuations at the Si/SiO2 interface impair the performance and reliability of nanoscale semiconductor devices and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss.

论文摘要：我们采用静电力显微镜（Electrostatic Force Microscopy）对硅/二氧化硅界面处的随机电报噪声（Random Telegraph Noise）开展空间分辨表征。实验测量结果表明，双态涨落定域于界面陷阱之中，其涨落速率与幅值均随偏置电压呈现依赖性变化。此类双能级系统会引发载流子数与迁移率的相关涨落，且具备一系列特征时间尺度；当将这些系统作为整体系综进行考量时，它们共同造就了1/f功率谱分布特征。硅/二氧化硅界面处的此类单个缺陷涨落会劣化纳米级半导体器件的性能与可靠性，同时也将成为基于半导体的量子传感器与量子计算机的主要噪声源之一。本次测量得到的涨落与四重速率竞争过程密切相关，其中包含秒量级的慢速双态开关切换，以及其中一个态下与能量损耗相关联的纳秒量级快速开关切换。