Quantum Wells in Magnesium–Manganese Bimetallic Antiperovskites for High Luminescence

Perovskite has attracted extensive attention in the realm
of photovoltaic
and light-emitting diodes (LEDs) on account of its outstanding photoelectric
properties. Perovskite-type quantum wells (QW) have been developed
for high-efficiency perovskite-type LEDs. However, there are few reports
on the in situ quantum well structure formed by a bimetallic antiperovskite
and its properties. In this work, we report a double/bimetallic antiperovskite
composed of magnesium and manganese. It is an in situ homogeneous
junction composed of a p-type manganese well layer and an n-type magnesium
barrier layer, which promotes the recombination of carriers and increases
the luminous efficiency. The in situ quantum wells enable the green
antiperovskite LED to have a maximum external quantum efficiency reaching
20.2% and a maximum luminance as high as 19000 cd m–2. These research results provide the chance to produce high-performance
LEDs based on an in situ quantum well structure. Meanwhile, the strategy
developed in this work is helpful for the design of other highly luminescent
lead-free materials.

钙钛矿（Perovskite）凭借其优异的光电性能，在光伏（photovoltaic）领域与发光二极管（LEDs）中受到广泛关注。为制备高效钙钛矿型发光二极管，研究者已开发出钙钛矿型量子阱（QW）。然而，目前关于双金属反钙钛矿（antiperovskite）原位形成的量子阱结构及其性能的研究报道仍较为稀少。本工作报道了一种由镁与锰构成的双金属反钙钛矿体系。该体系为原位同质结，由p型锰阱层与n型镁势垒层组成，可促进载流子复合并提升发光效率。该原位量子阱使绿色反钙钛矿LED的最大外量子效率达到20.2%，最大亮度高达19000 cd·m⁻²。上述研究成果为基于原位量子阱结构的高性能LED的制备提供了可能。同时，本工作提出的设计策略也可为其他高性能无铅发光材料的研发提供有益参考。