Atomically thin MoS2 with ultra-low friction properties based on strong interface interaction
收藏中国科学院兰州化学物理研究所科学数据中心2025-12-11 更新2026-01-10 收录
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资源简介：
Atomically thin lubrication materials with anti-friction
properties are crucial for reducing energy consumption and extending the
service life of micro/nanoelectromechanical systems (MEMS/NEMS). However,
achieving atomically thin films with ultra-low friction properties at the
atomic/nanoscale even at the micrometer scale presents significant
challenges. In this study, large-size and high-quality monolayer MoS2 (ML
MoS2) was grown on SiO2/Si substrate by chemical vapor deposition (CVD)
method. Compared with mechanically exfoliated ML MoS2, the CVD-grown
ML MoS2 (CVD-MoS2) exhibits an ultra-lower friction coefficient (0.009 04).
Based on the stick–slip effect and Prandtl–Tomlinson (P–T) model, the reduction of puckering effect indicates stronger interaction
and lower interface potential barrier in tip, CVD-MoS2, and SiO2/Si substrate system. Moreover, combining with the density
functional theory calculations, the stronger interface adhesion and higher overall charge redistribution degree of CVD-MoS2 can
also be used to explain its ultralow friction state. This work will provide theoretical guidance for designing ultra-thin lubricating
materials with ultra-low friction properties.
提供机构：
中国科学院兰州化学物理研究所科学数据中心
创建时间：
2025-12-11
