CrGexSi1-xTe3单晶制备与磁性测量数据集

最近，铬化合物CrXTe3（X = Si，Ge）家族中的二维铁磁性引起了广泛的研究兴趣。尽管与 CrTe6 八面体的结构相似，插入的 Ge 或 Si 二聚体的尺寸效应导致磁性的显着差异。在本项目中，我们报告了通过助熔剂法合成的一类新的四元范德华铁磁材料 CrGeδSi1-δTe3 (δ ＜ 0.2)。 Si位点的Ge取代导致晶格膨​​胀，并进一步提高居里温度，降低磁各向异性。通过比热和磁化测量研究了 Cr0.96Ge0.17Si0.82Te3 的临界行为。并且提取的临界指数是自洽的，并且很好地遵守比例定律，更接近 2D Ising 模型，相互作用衰减为 J(r)≈r^-3.44。

Recently, two-dimensional ferromagnetism in the family of chromium compounds CrXTe3 (X = Si, Ge) has attracted extensive research interest. Although structurally similar to the CrTe6 octahedron, the size effect of the intercalated Ge or Si dimers leads to significant differences in magnetic properties. In this work, we report a new family of quaternary van der Waals ferromagnetic materials CrGeδSi1−δTe3 (δ < 0.2) synthesized via the flux method. Ge substitution at the Si sites leads to lattice expansion, which further increases the Curie temperature and reduces the magnetic anisotropy. The critical behavior of Cr0.96Ge0.17Si0.82Te3 is investigated via specific heat and magnetization measurements. Moreover, the extracted critical exponents are self-consistent and well obey the scaling law, which is closer to the 2D Ising model, with the interaction decaying as J(r) ≈ r^−3.44.