制备两新型量子比特

基于新型Ge/Si棚顶型纳米线材料，制备高度可调的双量子点。搭建微波测量平台，实现了空穴比特的电偶极自旋共振。通过进一步实验，测得了两套独立的Rabi振荡。选择不同的微波驱动频率，分别对应两个比特的共振频率，可以分别实现对两个比特的高频操控，提取出各自的Rabi振荡速率。并验证了两个比特Rabi振荡速率与外加功率的正相关依赖关系。

Based on novel capped Ge/Si nanowire materials, highly tunable double quantum dots were fabricated. A microwave measurement platform was established, and electrical dipole spin resonance (EDSR) for hole qubits was achieved. Through further experiments, two independent Rabi oscillations were measured. By selecting distinct microwave driving frequencies corresponding to the resonance frequencies of the two qubits respectively, high-frequency individual manipulation of each qubit was realized, and their respective Rabi oscillation rates were extracted. Furthermore, the positive correlation dependence between the Rabi oscillation rates of the two qubits and the applied microwave power was validated.

搜集汇总

背景与挑战

背景概述

该数据集聚焦于利用新型Ge/Si棚顶型纳米线材料，制备了高度可调的双量子点结构，并搭建了微波测量平台以实现空穴比特的电偶极自旋共振。通过实验，成功观测到两套独立的Rabi振荡，并验证了其振荡速率与外加功率的正相关依赖关系。