The effect of the deposit temperature of ZnO doped with Ni by HFCVD

The raw (XRD) and data (PL) files required to reproduce the findings reported in "The effect of the deposit temperature of ZnO doped with Ni by HFCVD" . The effect of the deposit temperature of zinc oxide (ZnO) doped with nickel (Ni) by hot filament chemical vapor deposition (HFCVD) technique can be observed. All the samples were deposited for 1 min using a H2 flow of 50 sccm. The source-filament distance was 2 mm, constant in all the deposits. The variation of the filament-substrate distance produces a different substrate temperature (deposit temperature).

本数据集包含复现《热丝化学气相沉积（HFCVD）法制备镍（Ni）掺杂氧化锌（ZnO）的沉积温度影响》一文所述研究结果所需的原始X射线衍射（XRD）文件与光致发光（PL）数据文件。通过该数据集可观测采用热丝化学气相沉积（HFCVD）技术制备的镍掺杂氧化锌的沉积温度所产生的影响。所有样品均以50标准立方厘米每分钟（sccm）的氢气流量沉积1分钟，所有沉积过程中的源-灯丝间距均恒定为2毫米。灯丝-衬底间距的变化会导致衬底温度（即沉积温度）产生差异。