Improved Single-Event Radiation Hardness of 1.2 kV Split-Gate SiC MOSFET with P+ Buffer

This letter experimentally validates the improved single-event radiation hardness of the 1.2 kV split-gate SiC MOSFET with P+ buffer (SG-PB-MOS) proposed in our earlier work. TCAD simulations reveal that the P+ buffer suppresses the gate-oxide electric field and extracts the excess holes generated by heavy-ion strikes. Irradiation test using 181Ta31+ ions with a LET of 85.91 MeV\u00b7cm2\/mg was performed, and the results show that the SG-PB-MOS improves irradiation hardness in terms of LGD, SELC, and SEB, and exhibits a 225 V higher SEB threshold voltage than the conventional structure. Notably, these enhancements are achieved without adverse impact on the static or switching performance under normal operating conditions. These results make the SG-PB-MOS a promising candidate for radiation-intensive applications.