Influence of laser excitation on inverse proximity effect in BiOI/NB neterostructures.

In recent years, the light-induced effects in superconductors have attracted intensive attention. The photosensitive bismuth oxyhalides semiconductors BiOX (X = Cl, Br and I) are promising substrates for sputtering due to their photosensitive properties and layered structure. In the current work, the superconductivity of 25 nm thick Nb films sputtered on the photosensitive semiconductors BiOI under laser irradiation was investigated. The resistive superconducting transitions were measured in the temperature range 5 K ≤ T ≤ 9 K. The shift of the superconducting transition temperature under laser excitation is in good agreement with the McMillan model which indicates the influence of the inverse proximity effect induced by the interface.

近年来，超导体中的光诱导效应受到了广泛关注。光敏性卤氧化铋半导体BiOX（X=Cl、Br、I）凭借其光敏特性与层状结构，成为适配溅射的优质衬底材料。本研究针对激光辐照环境下，沉积于光敏半导体BiOI表面的25 nm厚铌（Nb）薄膜的超导电性开展了探究。实验在5 K ≤ T ≤ 9 K的温度区间内，对该薄膜的电阻型超导转变进行了测量。激光激发下超导转变温度的偏移量与麦克米兰（McMillan）模型吻合良好，该模型揭示了界面诱导的逆邻近效应的影响。