Synaptic Behavior in Ferroelectric Epitaxial Rhombohedral Hf0.5Zr0.5O2 Thin Films

In this work, the switching mechanism of the rhombohedral phase of HZO films is characterized by a two-stage process. In addition, the synaptic behaviour of this phase is presented, comparing it with previous reports on orthorhombic or non-epitaxial films. Unexpected similarities have been found between these structurally distinct systems.本研究采用两步法对铪锆氧（HZO）薄膜的菱方相（rhombohedral phase）开关机制进行了表征。此外，本研究还阐述了该相的突触行为，并将其与此前关于正交相（orthorhombic）薄膜或非外延薄膜的相关报道进行对比。在这些结构迥异的体系中，我们发现了意想不到的相似性。