Data from: Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Metalorganic chemical vapor deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

金属有机化学气相沉积（Metalorganic chemical vapor deposition, MOCVD）是制备发光器件与半导体激光二极管所用氮化镓（Gallium Nitride, GaN）薄膜结构的核心工艺技术。薄膜均匀性是衡量设备性能与芯片制程的重要指标。本文提出一种优化行星式GaN-MOCVD装置衬底转速的方法以提升薄膜质量，该装置采用搭载7片6英寸晶圆的行星架结构。本文采用计算流体动力学（Computational Fluid Dynamics, CFD）方法，获得了低压瞬态过程的数值解。为评估不同区域转速对薄膜生长均匀性的影响，本文引入单因素分析法。研究结果表明，薄膜生长速率与均匀性均与转速存在显著相关性。随后，本文基于各变量与对应仿真结果构建响应面模型。通过响应面模型与遗传算法在生长速率与生长均匀性间取得平衡，本文提出最优转速匹配组合方案，可为工业应用提供有益参考。该方法可有效缩减优化周期，经优化后可得到均匀性与质量均达最优的薄膜制品。