Data from: Hydrothermally synthesized PZT film grown in highly concentrated KOH solution with large electromechanical coupling coefficient for resonator

This paper presents a study of lead zirconate titanate (PZT) films hydrothermally grown on a dome-shaped titanium diaphragm. Few articles in the literature address the implementation of hydrothermal PZT films on curved-diaphragm substrates for resonators. In this study, a 50-μm-thick titanium sheet is embossed using balls of designed dimensions to shape a dome-shaped cavity array. Through single-process hydrothermal synthesis, PZT films are grown on both sides of the processed titanium diaphragm with good adhesion and uniformity. The hydrothermal synthesis process involves a high concentration of potassium hydroxide solution and excess amounts of lead acetate and zirconium oxychloride octahydrate. Varied deposition times and temperatures of PZT films are investigated. The grown films are characterized by X-ray diffraction and scanning electron microscopy. The 10-μm-thick PZT dome-shaped resonators with 60- and 20-μm-thick supporting layers are implemented and further tested. Results for both resonators indicate that large electromechanical coupling coefficients and a series resonance of 95 MHz from 14 MHz can be attained. The device is connected to a complementary metal–oxide–semiconductor integrated circuit for analysis of oscillator applications. The oscillator reaches a Q value of 6300 in air. The resonator exhibits a better sensing stability when loaded with water when compared with air.

本研究针对在穹顶形钛振膜上水热生长的锆钛酸铅（lead zirconate titanate, PZT）薄膜展开系统性探究。目前公开学术文献中，鲜有针对曲面振膜基底上制备水热法PZT薄膜以应用于谐振器的相关研究报道。本研究采用定制尺寸的钢球对50微米厚的钛板材进行压印成型，制备得到带有穹顶形空腔阵列的结构。通过单步水热合成工艺，可在经处理后的钛振膜两侧生长出附着力优异且均匀性良好的PZT薄膜。该水热合成工艺采用高浓度氢氧化钾溶液，以及过量的乙酸铅与八水氧氯化锆作为前驱体。本研究还考察了不同沉积时长与沉积温度对PZT薄膜生长的影响。对所生长的薄膜采用X射线衍射（X-ray diffraction）与扫描电子显微镜（scanning electron microscopy, SEM）进行了表征。本研究制备了支撑层厚度分别为60微米与20微米的10微米厚PZT穹顶形谐振器，并对其开展了进一步的性能测试。两款谐振器的测试结果均表明，其可实现较高的机电耦合系数，且串联谐振频率覆盖14 MHz至95 MHz区间。将该谐振器与互补金属氧化物半导体（complementary metal–oxide–semiconductor, CMOS）集成电路相连，以开展振荡器应用相关的性能分析。该振荡器在空气中的品质因数（Q值）可达6300。相较于空气环境，该谐振器在负载水的工况下展现出更优的传感稳定性。