Data underlying the figures in publication: A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature

Data used in the figures of paper: "A quantum dot crossbar with sublinear scaling of interconnects at cryogenic temperature". Measurements of a 36x36 gate electrode crossbar, fabricated on an industrial 28Si-MOS stack, that supports 648 narrow-channel field effect transistors for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines.

本数据集为论文《低温下互连亚线性缩放的量子点交叉阵列》配图所用。该数据集源自对36×36栅电极交叉阵列的测试：该阵列基于工业级28Si-MOS（28硅金属-氧化物-半导体）叠层结构制备，集成了648个用于栅定义量子点的窄沟道场效应晶体管，且当控制线路线性增加时，量子点数量呈二次方增长。