Large Volume High Pressure High Temperature Synthesis of Boron Nitride Nanoco...
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Due to its high band gap (6eV) layered hexagonal boron nitride (BN) is a promising material for the construction of Far UV light emitting devices. Hence, in search of highly...
由于层状六方氮化硼（hexagonal boron nitride，BN）拥有6电子伏特的宽带隙，因此其是制备远紫外（Far UV）发光器件的极具潜力的材料。故而，在寻求高性能……
