耦合量子效应的可计算器件模型及程序算例数据集

半导体器件模拟是现代电子技术不可或缺的关键工具之一，它可以帮助优化设计、降低成本、提高产品性能、缩短产品研发周期，对推动技术创新的发展有着重要的促进作用。本数据集基于对量子漂移扩散（QDD）模型设计高效计算方法及误差分析理论，对Schrödinger-Poisson与漂移扩散（SPDD）耦合模型设计的高效高精度数值方法和对漂移扩散与量子漂移扩散（SP-QDD）耦合模型提出的高效数值方法，建立了三维半导体器件有限元模拟并行程序DESIGN (DEvice Simulation Gallery at Nanoscale)。使用DESIGN对FinFET、 GAAFE和RTD器件进行了仿真计算，验证了程序的鲁棒性和正确性。数据集的文件夹包含①算法对应论文；②算法代码；③原始仿真数据；③仿真图片；④数据说明文档。 数据量约238.7MB。

Semiconductor device simulation is an indispensable critical tool in modern electronic technology. It facilitates design optimization, cost reduction, product performance enhancement, and shortening of product development cycles, while playing a significant role in promoting technological innovation. This dataset develops the 3D finite-element parallel semiconductor device simulation program named DESIGN (DEvice Simulation Gallery at Nanoscale) based on efficient computational methods and error analysis theories for the Quantum Drift-Diffusion (QDD) model, efficient high-precision numerical methods for the coupled Schrödinger-Poisson and Drift-Diffusion (SPDD) model, and efficient numerical methods proposed for the coupled Drift-Diffusion and Quantum Drift-Diffusion (SP-QDD) model. Simulations of FinFET, GAAFE, and RTD devices were carried out using DESIGN to validate the program's robustness and correctness. The dataset folder includes: 1. Papers corresponding to the algorithms; 2. Algorithm source code; 3. Original simulation data; 4. Simulation images; 5. Data description documents. The total data volume is approximately 238.7 MB.