Emulation of Heavy-Ion-Induced Single Event Effects in Integrated Circuits Using Focused Pulsed X-rays
收藏DataCite Commons2025-07-14 更新2026-05-03 收录
下载链接：
https://doi.esrf.fr/10.15151/ESRF-ES-2188880318
下载链接
链接失效反馈官方服务：
资源简介：
The goal of the proposed experiment is to investigate in which conditions focused pulsed X-rays could emulate heavy ions for Single Event Upset (SEU), Burst (huge amount of simultaneous SEUs), Single Event Latchup (SEL) or Single Event Burnout (SEB) characterization/selection of CMOS/biCMOS integrated circuits (IC) and power devices.
提供机构：
European Synchrotron Radiation Facility
创建时间：
2025-07-14
