Research data supporting "Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well"

In this work the optical properties of a (001) oriented zincblende InGaN single quantum well structure with stacking faults (SF) has been studied by cathodoluminescence spectroscopy (CL) and scanning transmission electron microscopy. Sharp emission features adjacent to stacking faults have been identified as quantum wires via their spatial anisotropy. Elongated indium-rich regions have been found adjacent to {111} stacking faults, which intersect the quantum well along the ⟨110⟩ in-plane directions and create quantum wire-like features. Description of dataset: File: “Fig_1(d)_spot_spectra.txt” contains normalised CL spot spectra taken from representative regions that appear to be SF-free (S1), In-rich near a SF (S2), and at the edge of a SF (S3). File: “Fig_2(d)_dataset.txt” contains the CL spectrum extracted from a linescan along SF3 in Figure 2 of the original paper, highlighting several quantum emissions. File: “Fig_2(f)_dataset.txt” contains the CL spectrum taken from a linescan along SF #3.

本研究针对具有层错（stacking faults, SF）的(001)取向闪锌矿结构InGaN单量子阱结构的光学特性，采用阴极射线发光光谱（cathodoluminescence spectroscopy, CL）与扫描透射电子显微镜开展了系统研究。通过空间各向异性特征，研究人员将层错附近的尖锐发射峰归因于量子线结构。研究发现，{111}型层错旁存在拉长的富铟区域，该区域沿⟨110⟩面内方向与量子阱相交，形成类量子线结构。
数据集说明如下：
文件"Fig_1(d)_spot_spectra.txt"包含归一化的阴极射线发光点光谱，采集自三类典型区域：无层错区域（S1）、层错附近的富铟区域（S2）以及层错边缘区域（S3）。
文件"Fig_2(d)_dataset.txt"包含从原文图2中沿SF3进行的线扫描提取的阴极射线发光光谱，该光谱清晰展示了多个量子发射特征。
文件"Fig_2(f)_dataset.txt"包含沿SF #3进行线扫描采集的阴极射线发光光谱。