一维无质量狄拉克半金属材料体系Nb2XTe6的拓扑电子结构

主要面向新型拓扑半金属实验表征研究，用角分辨光电子能谱研究了一维无质量狄拉克材料体系Nb2XTe6的精细能带结构，包括体态能带和拓扑表面态等，形成此数据集。数据量35.00MB。采集方案为在同步辐射光源的角分辨光电子能谱线站及武汉大学的自旋分辨角分辨光电子能谱仪实验测量获得；采集地点为瑞士光源，上海光源和武汉大学角分辨光电子能谱实验室；采集时间为2018年2月-2019年11月；使用设备为瑞士光源 ADRESS 光束线的 SX-ARPES 终端站，上海光源BL09U线站和武汉大学角分辨光电子能谱实验室的角分辨光电子能谱仪。

This dataset is intended for experimental characterization research on novel topological semimetals. The fine electronic band structure of the one-dimensional massless Dirac material system Nb₂XTe₆, including bulk electronic bands and topological surface states, was studied using angle-resolved photoemission spectroscopy (ARPES). The dataset has a size of 35.00 MB. The data were collected via experimental measurements at the angle-resolved photoemission spectroscopy beamlines of synchrotron radiation light sources and the spin-resolved angle-resolved photoemission spectroscopy setup at Wuhan University. The data acquisition locations are the Swiss Light Source (SLS), the Shanghai Synchrotron Radiation Facility (SSRF), and the Angle-Resolved Photoemission Spectroscopy Laboratory of Wuhan University. The data collection period was from February 2018 to November 2019. The equipment utilized includes the SX-ARPES endstation of the ADRESS beamline at the Swiss Light Source (SLS), the BL09U beamline at the Shanghai Synchrotron Radiation Facility (SSRF), and the angle-resolved photoemission spectroscopy instruments in the Angle-Resolved Photoemission Spectroscopy Laboratory of Wuhan University.