Supporting data for "Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers"

In this repository you will find the data accompanying the publication: “Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers”, by Salomon et al. It describes the implantation-free fabrication of silicon-based light emitting diodes containing as active emitter material Si based color centers called G’-centers. It describes the electroluminescence spectra and I-V properties of the diodes, as well as correlated emission parameters such as integrated intensities and full width at half maximum versus excitation current as well as power and temperature-dependent measurements and a comparison between electroluminescence an photoluminescence emission of the color centers.