Influence of the microstructure and optical constants on plasmonic properties of copper nanolayers

This dataset contains the effective dielectric functions of thin copper layers (12, 25 and 35 nm) thermally deposited on a silicon substrate with the deposition rate 0.5 and 5 angstrom per second. The optical constants of the prepared Cu thin films were investigated by means of the V-VASE device from J.A. Woollam Co., Inc. (Lincoln, NE, USA). Ellipsometric azimuths (Ψ, Δ), were measured for three angles of incidence light (65°, 70° and 75°) in the spectral range 193-2000 nm (0.6-6.5 eV). The analysis of ellipsometric data was performed using the WVASE32 software.The copper thin layer were evaporated on Si100 wafer using the thermal evaporation where the pressure was below 2·10-5 mbar. Pieces of Cu (99.99%) wire were placed in a molybdenum spiral evaporator, which is 20 cm below the substrate holder. The deposition rate and thickness were controlled by a quartz crystal microbalance - QCM (6.0 MHz).This data showed that the thickness of a layer and the deposition rate are crucial parameters which affect on the optical and plasmonic properties of the copper films produced by PVD method.The results of this research are published in T. Rerek et. al, Influence of the microstructure and optical constants on plasmonic properties of copper nanolayers, Materials 2021, 14, 7292..The results in this dataset are presented in 3 columns separated by a tab. Column 1 - photon energy, 2 - real part (ε1) of the effective dielectric function, 3 - imaginary part (ε2) of the effective dielectric function.

本数据集包含沉积于硅基底上的三种厚度（12 nm、25 nm与35 nm）铜薄层的有效介电函数，其采用热蒸发工艺制备，沉积速率分别为0.5与5埃每秒。
采用美国J.A. Woollam Co., Inc.（美国内布拉斯加州林肯市）的V-VASE椭偏仪，对制备得到的铜薄膜光学常数进行了表征。
在193~2000 nm的光谱范围（对应光子能量0.6~6.5 eV）内，针对3种入射光角度（65°、70°与75°），测量了椭偏方位角Ψ与Δ。
椭偏数据的分析采用WVASE32软件完成。
铜薄层通过热蒸发工艺沉积于Si100晶圆上，沉积腔室压力低于2×10⁻⁵ mbar；将纯度为99.99%的铜线材置于钼螺旋蒸发器中，该蒸发器位于样品架下方20 cm处；沉积速率与薄膜厚度通过6.0 MHz的石英晶体微天平（Quartz Crystal Microbalance，QCM）进行控制。
本数据集的数据表明，薄膜厚度与沉积速率是影响物理气相沉积（Physical Vapor Deposition，PVD）法制备的铜薄膜光学及等离子体特性的关键参数。
本研究成果已发表于T. Rerek等人的论文《微结构与光学常数对铜纳米层等离子体特性的影响》，刊载于*Materials* 2021, 14, 7292。
本数据集的数据以制表符分隔的三列形式呈现：第1列为光子能量，第2列为有效介电函数的实部（ε₁），第3列为有效介电函数的虚部（ε₂）。