Visualizing local fast ionic conduction pathways in nanocrystalline lanthanum manganite by isotope exchange-atom probe tomography - dataset

Raw data for atom probe tomography 2D elemental reconstructions of 18O-exchanged La0.8Sr0.2MnO3 thin films. LSM thin films were deposited by large-area PLD (PVD Systems – PLD 5000) using a 248 nm KrF excimer laser (Lambda Physics – COMPex PRO 205). The layers were deposited on Al2O3 (0001) single crystal substrate (Crystec GmbH). A thin barrier layer of Ce0.8Sm0.2O1.9 (SDC) was deposited before the LSM film in order to avoid cationic intermixing at the interface. Both layers were deposited at 700 °C, under an oxygen pressure of 2.6 × 10−2 mbar, target–substrate distance of 95 mm, laser fluency ≈1.2 J cm−2 and 5 Hz of laser frequency. The thickness of LSM and SDC layers deposited was ≈45 nm and ≈35 nm, respectively, as measured by spectroscopy ellipsometry (UVISEL, Horiba scientific).The nominal oxygen exchange temperature and time were 550 °C and 1 h and 40 min, respectively. Instrument Cameca LEAP 4000X Si. APT performed at 45.5 K using a 30 pJ laser energy and 500 kHz pulse rate. The flight path length was 90 mm and the ion detection rate was set to 5 ions per 1000 pulses, resulting in a bias range of 5000–7400 V during the data collection. Reconstructions were generated in Cameca's IVAS 3.6.18 software. A systematic energy deficit correction was employed to improve the mass spectral resolution.

本数据集为经18O同位素交换处理的La₀.₈Sr₀.₂MnO₃（LSM）薄膜的原子探针层析成像二维元素重建原始数据。
该LSM薄膜通过大面积脉冲激光沉积（Pulsed Laser Deposition, PLD）工艺制备，采用PVD Systems PLD 5000沉积设备与Lambda Physics COMPex PRO 205型248 nm KrF准分子激光器作为沉积光源。薄膜沉积于Al₂O₃(0001)单晶衬底（Crystec GmbH）之上。为避免界面处阳离子互混，在LSM薄膜沉积前预先制备了一层厚度较薄的Ce₀.₈Sm₀.₂O₁.₉（SDC）阻挡层。
两层薄膜均在700 ℃、氧气压力2.6×10⁻² mbar、靶材-衬底间距95 mm、激光通量约1.2 J·cm⁻²、激光重复频率5 Hz的条件下完成沉积。通过光谱椭偏仪（UVISEL，Horiba Scientific）测得，沉积得到的LSM与SDC薄膜厚度分别约为45 nm与35 nm。
样品的名义氧交换处理温度与时长分别为550 ℃以及1小时40分钟。
原子探针层析成像（Atom Probe Tomography, APT）测试采用Cameca LEAP 4000X Si型仪器，测试温度设置为45.5 K，激光能量30 pJ，脉冲重复频率500 kHz；飞行管长度为90 mm，离子检测率设置为每1000个脉冲捕获5个离子，数据采集过程中偏置电压范围为5000~7400 V。
元素重建工作通过Cameca公司的IVAS 3.6.18软件完成，并通过系统性能量亏损校正优化了质谱分辨率。