Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals

This is a set of research data related to the article titled "Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals" J. Appl. Phys. 135, 193103 (2024), doi:10.1063/5.0190483.The set contains numerical data used to create the next Figures:Figure 3. Transmittance spectra of the S8 structure at different gate voltages below the threshold (T=70K)Figure 4. Dependence of the depletion region width on the gate voltage overdrive obtained in simulations fitting the experimental data in Ref. [11] and using Eq. (2).Figure 5. Drain current as a function of the bottom gate voltage for C1 structure (bottom gate transfer current-voltage characteristic) at top gate voltage VTG = 0. Figure 6. a) Reflectance spectra of the C1 structure measured with VBG = 0 and modulated top gate voltage from VTG = –10 V to different values from VTG = 0 to VTG = –7 V. (b) Reflectance spectra extracted from the experimental spectra in (a) using the convolution procedure assuming the Lorentzian shape of the spectral lines. Figure 7(a) Reflectance spectra of the C1 structure measured at different bottom gate voltage with top gates modulated between VTG = 0 and VTG = –6 V. (b), (c) Reflectance spectra extracted from the experimental spectra in (a) using the convolution procedure. The dotted lines in (a) show the fitting spectra, which are the differences of the spectra shown in (b) and (a). (d) The contour plot showing the reflectance maxima at VTG = 0 and VTG = –6 V.