Exploiting the bending of GaAs nanowires due to optical excitation using Laser pump and X-ray probe measurement

The flexoelastic response of bent GaAs nanowires is planned to identify experimentally by measuring the change of the bending radius of single bent nanowires by a pump and probe experiment at beamline ID09 equipped with a fs laser. After the excitation of electrons the redistribution of charge carriers in the conduction band from the compressed to the expanded regions of the bent lattice will screen the radial electric field and will modify the radial strain gradient visible by a change of bending radius.

本研究拟通过实验手段表征弯曲态砷化镓（GaAs）纳米线的挠曲弹性响应：具体方案为借助搭载飞秒（fs）激光器的ID09光束线开展泵浦-探测实验，测量单根弯曲纳米线的弯曲半径变化。在电子被激发后，导带中的载流子会从弯曲晶格的受压区域向受张区域发生重新分布，这一过程将屏蔽径向电场，进而改变径向应变梯度，最终通过弯曲半径的变化体现出来。