Structural analysis of the tellurium dioxide thin films

TeO2 thin films were deposited by magnetron sputtering method. After deposition, amorphous samples were annealed at various temperatures. Influence of annealing temperature on a presence of crystalline phase was investigated.

采用磁控溅射法（magnetron sputtering）制备了二氧化碲（TeO2）薄膜。沉积完成后，将所得非晶样品置于不同温度下进行退火处理。本研究考察了退火温度对晶相（crystalline phase）存在情况的影响。