Sub-100 nm β -Ga2O3 thin channel MOSFET with near 55 GHz fmax and > 100 V breakdown voltage

Name: Sub-100 nm β -Ga2O3 thin channel MOSFET with near 55 GHz fmax and > 100 V breakdown voltage
Creator: AIP Publishing
Published: 2024-08-05 04:00:40
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DataCite Commons2024-08-05 更新2024-08-18 收录

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https://aip.figshare.com/articles/dataset/Sub-100_nm_-Ga2O3_thin_channel_MOSFET_with_near_55_GHz_fmax_and_100_V_breakdown_voltage/26366665/1

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2024-08-05

Sub-100 nm β -Ga2O3 thin channel MOSFET with near 55 GHz fmax and &gt; 100 V breakdown voltage

Sub-100 nm β -Ga2O3 thin channel MOSFET with near 55 GHz fmax and > 100 V breakdown voltage